Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, B. M. Jablon, R. Johnston, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, K. Mingard, P. J. Parbrook, M. D. SmithJ. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, A. Knauer, S. Hagedorn, S. Walde, M. Weyers, P. M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, A. Winkelmann

Research output: Contribution to journalConference articlepeer-review

Abstract

In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on crystal structure, crystal misorientation, grain boundaries, strain and structural defects on length scales from tens of nanometres to tens of micrometres. Here we report on the imaging and analysis of dislocations and sub-grains in nitride semiconductor thin films (GaN and AlN) and tungsten carbide-cobalt (WC-Co) hard metals. Our aim is to illustrate the capability of these techniques for investigating structural defects in the SEM and the benefits of combining these diffraction-based imaging techniques.

Original languageEnglish
Article number012023
JournalIOP Conference Series: Materials Science and Engineering
Volume891
Issue number1
DOIs
Publication statusPublished - 5 Aug 2020
Event16th European Workshop on Modern Developments and Applications in Microbeam Analysis, EMAS 2019 - Trondheim, Norway
Duration: 19 May 201923 May 2019

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering

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