Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment

David Scanlon, Benjamin Morgan, Graeme Watson, Aron Walsh

Research output: Contribution to journalArticle

195 Citations (Scopus)

Abstract

Understanding conduction in Cu2O is vital to the optimization of Cu-based p-type transparent conducting oxides. Using a screened hybrid–density-functional approach we have investigated the formation of p-type defects in Cu2O giving rise to single-particle levels that are deep in the band gap, consistent with experimentally observed activated, polaronic conduction. Our calculated transition levels for simple and split copper vacancies explain the source of the two distinct hole states seen in DLTS experiments. The necessity of techniques that go beyond the present generalized-gradient- and local-density-approximation techniques for accurately describing p-type defects in Cu(I)-based oxides is discussed.

Original languageEnglish
Article number096405
JournalPhysical Review Letters
Volume103
Issue number9
DOIs
Publication statusPublished - 28 Aug 2009

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conduction
oxides
defects
copper
gradients
optimization
approximation

Keywords

  • cuprous-oxide
  • oxygen vacancies
  • doped cu2o
  • transport
  • single-crystal
  • thin-films
  • copper oxides
  • defect
  • electrical-conductivity
  • mechanisms
  • ab-initio

Cite this

Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment. / Scanlon, David; Morgan, Benjamin; Watson, Graeme; Walsh, Aron.

In: Physical Review Letters, Vol. 103, No. 9, 096405, 28.08.2009.

Research output: Contribution to journalArticle

Scanlon, David ; Morgan, Benjamin ; Watson, Graeme ; Walsh, Aron. / Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment. In: Physical Review Letters. 2009 ; Vol. 103, No. 9.
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