Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications

Matthew J. Wahila, Zachary W. Lebens-Higgins, Keith Butler, Daniel Fritsch, Robert E. Treharne, R G Palgrave, J. C. Woicik, Benjamin Morgan, Aron Walsh, Louis F J Piper

Research output: Contribution to journalArticle

Abstract

In the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component metals like indium to provide charge carrier conduction, and their optoelectronic properties are not as predictable and well-described as those of traditional, crystalline semiconductor materials. Here we report on our comprehensive study of the amorphous zinc-tin-oxide (a-ZTO) system for use as an indium-free, n-type TAOS. Using a combination of high-throughput co-deposition growth, high resolution spectral mapping, and atomistic calculations, we explain the development of disorder related subgap states in SnO2-like a-ZTO and optical bandgap reduction in ZnO-like a-ZTO. In addition, we report on a composition-induced electronic and structural transition in ZnO-like a-ZTO resulting in an exceptionally high Figure of Merit, comparable to that of amorphous indium-gallium-zinc-oxide (a-IGZO). Our results accelerate the development of a-ZTO and similar materials as indium-free replacements for a-IGZO.
LanguageEnglish
Article number022509
JournalAPL Materials
Volume7
Issue number2
Early online date13 Dec 2018
DOIs
StatusPublished - 1 Feb 2019

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Zinc oxide
Tin oxides
Optoelectronic devices
Oxide films
Indium
Thin films
Zinc Oxide
Amorphous semiconductors
Gallium
Spectral resolution
Optical band gaps
stannic oxide
Charge carriers
Oxides
Solar cells
Electronic equipment
Metals
Display devices
Throughput
Semiconductor materials

Cite this

Wahila, M. J., Lebens-Higgins, Z. W., Butler, K., Fritsch, D., Treharne, R. E., Palgrave, R. G., ... Piper, L. F. J. (2019). Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications. APL Materials, 7(2), [022509]. https://doi.org/10.1063/1.5053683

Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications. / Wahila, Matthew J.; Lebens-Higgins, Zachary W.; Butler, Keith; Fritsch, Daniel; Treharne, Robert E.; Palgrave, R G; Woicik, J. C.; Morgan, Benjamin; Walsh, Aron; Piper, Louis F J.

In: APL Materials, Vol. 7, No. 2, 022509, 01.02.2019.

Research output: Contribution to journalArticle

Wahila, MJ, Lebens-Higgins, ZW, Butler, K, Fritsch, D, Treharne, RE, Palgrave, RG, Woicik, JC, Morgan, B, Walsh, A & Piper, LFJ 2019, 'Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications' APL Materials, vol. 7, no. 2, 022509. https://doi.org/10.1063/1.5053683
Wahila MJ, Lebens-Higgins ZW, Butler K, Fritsch D, Treharne RE, Palgrave RG et al. Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications. APL Materials. 2019 Feb 1;7(2). 022509. https://doi.org/10.1063/1.5053683
Wahila, Matthew J. ; Lebens-Higgins, Zachary W. ; Butler, Keith ; Fritsch, Daniel ; Treharne, Robert E. ; Palgrave, R G ; Woicik, J. C. ; Morgan, Benjamin ; Walsh, Aron ; Piper, Louis F J. / Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications. In: APL Materials. 2019 ; Vol. 7, No. 2.
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