A tunable amorphous p-type ternary oxide system

the highly mismatched alloy of copper tin oxide

Patrick J M Isherwood, Keith T. Butler, Aron Walsh, John M. Walls

Research output: Contribution to journalArticle

4 Citations (Scopus)
63 Downloads (Pure)

Abstract

The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO2. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

Original languageEnglish
Article number105702
JournalJournal of Applied Physics
Volume118
Issue number10
DOIs
Publication statusPublished - 14 Sep 2015

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copper oxides
tin oxides
oxides
electrical resistivity
disorders
density functional theory
electronic structure
valence
copper
simulation

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A tunable amorphous p-type ternary oxide system : the highly mismatched alloy of copper tin oxide. / Isherwood, Patrick J M; Butler, Keith T.; Walsh, Aron; Walls, John M.

In: Journal of Applied Physics, Vol. 118, No. 10, 105702, 14.09.2015.

Research output: Contribution to journalArticle

Isherwood, Patrick J M ; Butler, Keith T. ; Walsh, Aron ; Walls, John M. / A tunable amorphous p-type ternary oxide system : the highly mismatched alloy of copper tin oxide. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 10.
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