A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon

R E Mason, P G Coleman

Research output: Contribution to journalArticlepeer-review

5 Citations (SciVal)
Original languageEnglish
Pages (from-to)3228-3230
Number of pages3
JournalApplied Surface Science
Volume252
Issue number9
Publication statusPublished - 2006

Bibliographical note

ID number: ISI:000236021300023

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