A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon

R E Mason, P G Coleman

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)3228-3230
Number of pages3
JournalApplied Surface Science
Volume252
Issue number9
Publication statusPublished - 2006

Cite this

A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. / Mason, R E; Coleman, P G.

In: Applied Surface Science, Vol. 252, No. 9, 2006, p. 3228-3230.

Research output: Contribution to journalArticle

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journal = "Applied Surface Science",
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AU - Mason, R E

AU - Coleman, P G

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PY - 2006

Y1 - 2006

M3 - Article

VL - 252

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