A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon

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@article{64bceaa227b245da9e2d14c74d935c54,

title = "A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon",

author = "Mason, {R E} and Coleman, {P G}",

note = "ID number: ISI:000236021300023",

year = "2006",

language = "English",

volume = "252",

pages = "3228--3230",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "9",

}