Abstract
This work represents the first demonstration of in-phase power-combined frequency multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists of two integrated circuits symmetrically placed along the E-plane of a single transmission waveguide. This strategy increases by a factor of 2 the maximum sustainable input power with regard to traditional waveguide multipliers. A biasless 190 GHz Schottky doubler based on this novel concept has been designed and tested with a 6-10% conversion efficiency measured across a 177-202 GHz band when driven with a 50-100 mW input power at 300 K.
| Original language | English |
|---|---|
| Pages (from-to) | 332-334 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 21 |
| Issue number | 6 |
| Early online date | 15 May 2011 |
| DOIs | |
| Publication status | Published - Jun 2011 |
Keywords
- power-combining
- local oscillator
- submillimeter wavelengths
- planar Schottky diode
- frequency multiplier
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