TY - JOUR
T1 - A single-waveguide in-phase power-combined frequency doubler at 190 GHz
AU - Siles, J V
AU - Maestrini, A
AU - Alderman, B
AU - Davies, Steven R
AU - Wang, H
AU - Treuttel, J
AU - Leclerc, E
AU - Narhi, T
AU - Goldstein, C
PY - 2011/6
Y1 - 2011/6
N2 - This work represents the first demonstration of in-phase power-combined frequency multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists of two integrated circuits symmetrically placed along the E-plane of a single transmission waveguide. This strategy increases by a factor of 2 the maximum sustainable input power with regard to traditional waveguide multipliers. A biasless 190 GHz Schottky doubler based on this novel concept has been designed and tested with a 6-10% conversion efficiency measured across a 177-202 GHz band when driven with a 50-100 mW input power at 300 K.
AB - This work represents the first demonstration of in-phase power-combined frequency multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists of two integrated circuits symmetrically placed along the E-plane of a single transmission waveguide. This strategy increases by a factor of 2 the maximum sustainable input power with regard to traditional waveguide multipliers. A biasless 190 GHz Schottky doubler based on this novel concept has been designed and tested with a 6-10% conversion efficiency measured across a 177-202 GHz band when driven with a 50-100 mW input power at 300 K.
KW - power-combining
KW - local oscillator
KW - submillimeter wavelengths
KW - planar Schottky diode
KW - frequency multiplier
UR - http://www.scopus.com/inward/record.url?scp=79958009763&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1109/lmwc.2011.2134080
U2 - 10.1109/lmwc.2011.2134080
DO - 10.1109/lmwc.2011.2134080
M3 - Article
SN - 1531-1309
VL - 21
SP - 332
EP - 334
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 6
ER -