A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

Despina C. Moschou, M. A. Exarchos, D. N. Kouvatsos, G. J. Papaioannou, A. T. Voutsas

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.

Original languageEnglish
Pages (from-to)1447-1452
Number of pages6
JournalMicroelectronic Engineering
Volume85
Issue number5-6
DOIs
Publication statusPublished - May 2008

Keywords

  • DLTS analysis
  • Polysilicon TFTs
  • SLS ELA crystallization
  • TFT reliability

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

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