A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

Despina C. Moschou; M. A. Exarchos; D. N. Kouvatsos; G. J. Papaioannou; A. T. Voutsas

doi:10.1016/j.mee.2008.01.083

A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

Despina C. Moschou, M. A. Exarchos, D. N. Kouvatsos, G. J. Papaioannou, A. T. Voutsas

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (SciVal)

Abstract

Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.

Original language	English
Pages (from-to)	1447-1452
Number of pages	6
Journal	Microelectronic Engineering
Volume	85
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mee.2008.01.083
Publication status	Published - May 2008

Keywords

DLTS analysis
Polysilicon TFTs
SLS ELA crystallization
TFT reliability

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics

Access to Document

10.1016/j.mee.2008.01.083

https://doi.org/10.1016/j.mee.2008.01.083

Cite this

@article{fd4f28e5648e4cff96a46fb54f6c80c9,

title = "A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance",

abstract = "Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.",

keywords = "DLTS analysis, Polysilicon TFTs, SLS ELA crystallization, TFT reliability",

author = "Moschou, {Despina C.} and Exarchos, {M. A.} and Kouvatsos, {D. N.} and Papaioannou, {G. J.} and Voutsas, {A. T.}",

year = "2008",

month = may,

doi = "10.1016/j.mee.2008.01.083",

language = "English",

volume = "85",

pages = "1447--1452",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "5-6",

}

TY - JOUR

T1 - A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

AU - Moschou, Despina C.

AU - Exarchos, M. A.

AU - Kouvatsos, D. N.

AU - Papaioannou, G. J.

AU - Voutsas, A. T.

PY - 2008/5

Y1 - 2008/5

N2 - Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.

AB - Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.

KW - DLTS analysis

KW - Polysilicon TFTs

KW - SLS ELA crystallization

KW - TFT reliability

UR - http://www.scopus.com/inward/record.url?scp=44349124473&partnerID=8YFLogxK

UR - https://doi.org/10.1016/j.mee.2008.01.083

U2 - 10.1016/j.mee.2008.01.083

DO - 10.1016/j.mee.2008.01.083

M3 - Article

AN - SCOPUS:44349124473

SN - 0167-9317

VL - 85

SP - 1447

EP - 1452

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-6

ER -

A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this