In this work, we propose a novel dual-chip power combining scheme where two symmetrical MMIC chips are mounted on a single transmission waveguide. This configuration adds an extra degree of freedom in power combining as it allows to double the number of diodes in split-block waveguide multipliers, and thereby, to increase the power handling capabilities of frequency multipliers by an additional factor of 2. The two chips are symmetrically placed along the E-plane within the transmission waveguide. This adds an additional symmetry plane that simplifies the computational cost of the circuit simulations since just half of the structure can be simulated by defining a perfect H-plane boundary condition at the symmetry plane. The proposed topology is demonstrated throughout the design of a dual-chip biasless 190 GHz broadband Schottky doubler based on United Monolithic Semiconductor’s (UMS) technology.
|Number of pages||5|
|Publication status||Published - Apr 2009|
|Event||20th International Symposium on Space Terahertz Technology - Charlottesville, USA United States|
Duration: 20 Apr 2009 → 22 Apr 2009
|Conference||20th International Symposium on Space Terahertz Technology|
|Country||USA United States|
|Period||20/04/09 → 22/04/09|
Siles, J., Maestrini, A., Alderman, B., & Davies, S. (2009). A novel dual-chip single-waveguide power combining scheme for millimeter-wave frequency multipliers. 205-209. Paper presented at 20th International Symposium on Space Terahertz Technology, Charlottesville, USA United States.