A membrane planar diode for 200 GHz mixing applications

JM Rollin; GI Chance; SR Davies

doi:10.1109/ICIMW.2004.1422026

A membrane planar diode for 200 GHz mixing applications

JM Rollin
, GI Chance
, SR Davies

Department of Physics

Research output: Contribution to conference › Paper

5 Citations (SciVal)

Abstract

The design and fabrication of a monolithically integrated subharmonic mixer for 200 GHz is described. The 1.5 /spl mu/m diameter Schottky diodes are formed on a 5 micron thick GaAs membrane suspended across the RF waveguide. Predicted mixer performance shows improved conversion loss compared with that of conventional flip-chip diodes.

Original language	English
DOIs	https://doi.org/10.1109/ICIMW.2004.1422026
Publication status	Published - 2004
Event	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terehertz Electronics - Duration: 1 Jan 2004 → …

Conference

Conference	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terehertz Electronics
Period	1/01/04 → …

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10.1109/ICIMW.2004.1422026

Cite this

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title = "A membrane planar diode for 200 GHz mixing applications",

abstract = "The design and fabrication of a monolithically integrated subharmonic mixer for 200 GHz is described. The 1.5 /spl mu/m diameter Schottky diodes are formed on a 5 micron thick GaAs membrane suspended across the RF waveguide. Predicted mixer performance shows improved conversion loss compared with that of conventional flip-chip diodes. ",

author = "JM Rollin and GI Chance and SR Davies",

year = "2004",

doi = "10.1109/ICIMW.2004.1422026",

language = "English",

note = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terehertz Electronics ; Conference date: 01-01-2004",

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AU - Rollin, JM

AU - Chance, GI

AU - Davies, SR

PY - 2004

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AB - The design and fabrication of a monolithically integrated subharmonic mixer for 200 GHz is described. The 1.5 /spl mu/m diameter Schottky diodes are formed on a 5 micron thick GaAs membrane suspended across the RF waveguide. Predicted mixer performance shows improved conversion loss compared with that of conventional flip-chip diodes.

U2 - 10.1109/ICIMW.2004.1422026

DO - 10.1109/ICIMW.2004.1422026

M3 - Paper

T2 - Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terehertz Electronics

Y2 - 1 January 2004

ER -

A membrane planar diode for 200 GHz mixing applications

Abstract

Conference

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