A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers

T. J. Houle, K. A. Williams, B. Murray, J. M. Rorison, I. H. White, A. J. Springthorpe, K. White, P. Paddon, P. A. Crump, M. Silver

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

A method to plot the log of the derivative of the threshold current with respect to temperature was presented. A robust relationship between the threshold current and temperature was obtained, applicable to a large range of laser diode device structures. Three laser structures were investigated. Inductance and currents were measured over a range of temperatures. Threshold currents were obtained for different device lengths for each device structure. The threshold current was found to be low at room temperature. It was concluded that threshold, too high for the application needed, could not be obtained at high temperatures.

Original languageEnglish
Pages206-207
Number of pages2
Publication statusPublished - 8 Oct 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States
Duration: 6 May 200111 May 2001

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO)
CountryUSA United States
CityBaltimore, MD
Period6/05/0111/05/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Houle, T. J., Williams, K. A., Murray, B., Rorison, J. M., White, I. H., Springthorpe, A. J., ... Silver, M. (2001). A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers. 206-207. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.

A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers. / Houle, T. J.; Williams, K. A.; Murray, B.; Rorison, J. M.; White, I. H.; Springthorpe, A. J.; White, K.; Paddon, P.; Crump, P. A.; Silver, M.

2001. 206-207 Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.

Research output: Contribution to conferencePaper

Houle, TJ, Williams, KA, Murray, B, Rorison, JM, White, IH, Springthorpe, AJ, White, K, Paddon, P, Crump, PA & Silver, M 2001, 'A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers', Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States, 6/05/01 - 11/05/01 pp. 206-207.
Houle TJ, Williams KA, Murray B, Rorison JM, White IH, Springthorpe AJ et al. A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers. 2001. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.
Houle, T. J. ; Williams, K. A. ; Murray, B. ; Rorison, J. M. ; White, I. H. ; Springthorpe, A. J. ; White, K. ; Paddon, P. ; Crump, P. A. ; Silver, M. / A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.2 p.
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abstract = "A method to plot the log of the derivative of the threshold current with respect to temperature was presented. A robust relationship between the threshold current and temperature was obtained, applicable to a large range of laser diode device structures. Three laser structures were investigated. Inductance and currents were measured over a range of temperatures. Threshold currents were obtained for different device lengths for each device structure. The threshold current was found to be low at room temperature. It was concluded that threshold, too high for the application needed, could not be obtained at high temperatures.",
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T1 - A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers

AU - Houle, T. J.

AU - Williams, K. A.

AU - Murray, B.

AU - Rorison, J. M.

AU - White, I. H.

AU - Springthorpe, A. J.

AU - White, K.

AU - Paddon, P.

AU - Crump, P. A.

AU - Silver, M.

PY - 2001/10/8

Y1 - 2001/10/8

N2 - A method to plot the log of the derivative of the threshold current with respect to temperature was presented. A robust relationship between the threshold current and temperature was obtained, applicable to a large range of laser diode device structures. Three laser structures were investigated. Inductance and currents were measured over a range of temperatures. Threshold currents were obtained for different device lengths for each device structure. The threshold current was found to be low at room temperature. It was concluded that threshold, too high for the application needed, could not be obtained at high temperatures.

AB - A method to plot the log of the derivative of the threshold current with respect to temperature was presented. A robust relationship between the threshold current and temperature was obtained, applicable to a large range of laser diode device structures. Three laser structures were investigated. Inductance and currents were measured over a range of temperatures. Threshold currents were obtained for different device lengths for each device structure. The threshold current was found to be low at room temperature. It was concluded that threshold, too high for the application needed, could not be obtained at high temperatures.

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