Abstract
A method to plot the log of the derivative of the threshold current with respect to temperature was presented. A robust relationship between the threshold current and temperature was obtained, applicable to a large range of laser diode device structures. Three laser structures were investigated. Inductance and currents were measured over a range of temperatures. Threshold currents were obtained for different device lengths for each device structure. The threshold current was found to be low at room temperature. It was concluded that threshold, too high for the application needed, could not be obtained at high temperatures.
Original language | English |
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Pages | 206-207 |
Number of pages | 2 |
Publication status | Published - 8 Oct 2001 |
Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States Duration: 6 May 2001 → 11 May 2001 |
Conference
Conference | Conference on Lasers and Electro-Optics (CLEO) |
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Country/Territory | USA United States |
City | Baltimore, MD |
Period | 6/05/01 → 11/05/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering