A 30 Gb/s CMOS driver integrated with silicon photonics MZM

Ke Li; D. Thomson; Peter R. Wilson; Shenghao Liu; Graham T. Reed

A 30 Gb/s CMOS driver integrated with silicon photonics MZM

Ke Li, D. Thomson, Peter R. Wilson, Shenghao Liu, Graham T. Reed

Department of Electronic & Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

15 Citations (SciVal)

Abstract

A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.

Original language	English
Publication status	Published - 1 Feb 2015
Event	IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015 - Phoenix, USA United States Duration: 17 May 2015 → 19 May 2015

Conference

Conference	IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
Country/Territory	USA United States
City	Phoenix
Period	17/05/15 → 19/05/15

Cite this

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title = "A 30 Gb/s CMOS driver integrated with silicon photonics MZM",

abstract = "A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.",

author = "Ke Li and D. Thomson and Wilson, {Peter R.} and Shenghao Liu and Reed, {Graham T.}",

year = "2015",

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language = "English",

note = " IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015 ; Conference date: 17-05-2015 Through 19-05-2015",

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T1 - A 30 Gb/s CMOS driver integrated with silicon photonics MZM

AU - Li, Ke

AU - Thomson, D.

AU - Wilson, Peter R.

AU - Liu, Shenghao

AU - Reed, Graham T.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.

AB - A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.

UR - http://eprints.soton.ac.uk/374682/

M3 - Paper

T2 - IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015

Y2 - 17 May 2015 through 19 May 2015

ER -

A 30 Gb/s CMOS driver integrated with silicon photonics MZM

Abstract

Conference

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