A 30 Gb/s CMOS driver integrated with silicon photonics MZM

Ke Li, D. Thomson, Peter R. Wilson, Shenghao Liu, Graham T. Reed

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.
Original languageEnglish
Publication statusPublished - 1 Feb 2015
Event IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015 - Phoenix, USA United States
Duration: 17 May 201519 May 2015

Conference

Conference IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
CountryUSA United States
CityPhoenix
Period17/05/1519/05/15

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Cite this

Li, K., Thomson, D., Wilson, P. R., Liu, S., & Reed, G. T. (2015). A 30 Gb/s CMOS driver integrated with silicon photonics MZM. Paper presented at IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015, Phoenix, USA United States.