Abstract
The generation of picosecond superradiant pulses from 408nm a GaN/InGaN laser diode is demonstrated for the first time. Pulses with peak powers above 2.8W, pulse energy of 57pJ and durations of 1.4ps are generated.
Original language | English |
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Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2012 |
Publication status | Published - 1 Dec 2012 |
Event | Quantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, USA United States Duration: 6 May 2012 → 11 May 2012 |
Conference
Conference | Quantum Electronics and Laser Science Conference, QELS 2012 |
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Country/Territory | USA United States |
City | San Jose, CA |
Period | 6/05/12 → 11/05/12 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics