1.3-W Ripple-Free Superluminescent Diode

L Burrow; F Causa; J Sarma

doi:10.1109/LPT.2005.853027

1.3-W Ripple-Free Superluminescent Diode

L Burrow, F Causa, J Sarma

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article

17 Citations (Scopus)

94 Downloads (Pure)

Abstract

This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs–AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.

Original language	English
Pages (from-to)	2035-2037
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2005.853027
Publication status	Published - Oct 2005

Keywords

Superluminescent diodes (SLDs)
Semiconductor device modelling
Optoelectronic devices

Access to Document

10.1109/LPT.2005.853027

Causa_Burrow_Sarma_IEEEPhotTechLett_Oct_05.pdf

http://ieeexplore.ieee.org/servlet/opac?punumber=68

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Burrow, L., Causa, F., & Sarma, J. (2005). 1.3-W Ripple-Free Superluminescent Diode. IEEE Photonics Technology Letters, 17(10), 2035-2037. https://doi.org/10.1109/LPT.2005.853027

@article{be6fb8de3ee848fdb489936823258135,

title = "1.3-W Ripple-Free Superluminescent Diode",

abstract = "This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs–AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.",

keywords = "Superluminescent diodes (SLDs), Semiconductor device modelling, Optoelectronic devices",

author = "L Burrow and F Causa and J Sarma",

year = "2005",

month = oct,

doi = "10.1109/LPT.2005.853027",

language = "English",

volume = "17",

pages = "2035--2037",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "10",

}

TY - JOUR

T1 - 1.3-W Ripple-Free Superluminescent Diode

AU - Burrow, L

AU - Causa, F

AU - Sarma, J

PY - 2005/10

Y1 - 2005/10

N2 - This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs–AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.

AB - This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs–AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.

KW - Superluminescent diodes (SLDs)

KW - Semiconductor device modelling

KW - Optoelectronic devices

UR - http://ieeexplore.ieee.org/servlet/opac?punumber=68

U2 - 10.1109/LPT.2005.853027

DO - 10.1109/LPT.2005.853027

M3 - Article

VL - 17

SP - 2035

EP - 2037

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 10

ER -