1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

J. C.L. Yong, Judy M. Rorison, Ian H. White

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.

Original languageEnglish
Pages (from-to)1553-1564
Number of pages12
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number12
DOIs
Publication statusPublished - 1 Dec 2002

Keywords

  • Material gain
  • Quantum wells
  • Semiconductor laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this