Abstract
Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 1553-1564 |
| Number of pages | 12 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 38 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1 Dec 2002 |
Funding
Manuscript received October 2, 2001; revised August 13, 2002. The work of J. C. L. Yong was supported by the University of Bristol’s Convocation and Overseas Research Scholarship. This work was supported by the EPSRC through the PHOTON Project. J. C. L. Yong and J. M. Rorison are with the Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1TR, U.K. I. H. White is with the Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, U.K. Digital Object Identifier 10.1109/JQE.2002.805100
Keywords
- Material gain
- Quantum wells
- Semiconductor laser
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering