1.3 μm quantum-dot electro-absorption modulator

Y. Chu, M. G. Thompson, R. V. Penty, I. H. White, A. R. Kovsh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The electro-absorption properties and Stark-shift of 1.3μm InGaAs quantum dot waveguide modulators are characterized under reverse bias. 2.5Gb/s data modulation is demonstrated for the first time with clear eye diagrams and error-free back-to-back performance.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
Publication statusPublished - 1 Dec 2007
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, USA United States
Duration: 6 May 200711 May 2007

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Conference

ConferenceConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUSA United States
CityBaltimore, MD
Period6/05/0711/05/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chu, Y., Thompson, M. G., Penty, R. V., White, I. H., & Kovsh, A. R. (2007). 1.3 μm quantum-dot electro-absorption modulator. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4452614] (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4452614