10Gb/s operation of novel single-mode, two-contact InGaAsP lasers with low drive current

A. B. Massara, L. J. Sargent, P. J. Heard, R. V. Penty, I. H. White

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The single-mode performance of two-contact indium gallium arsenide phosphide lasers with low drive current was demonstrated. The device was fabricated using focused ion beam etching of single contact lasers. The signal bandwidth was found to increase on employing a two-dimensional lattice grating without perturbation of the device dynamics.

Original languageEnglish
Pages191-192
Number of pages2
Publication statusPublished - 8 Oct 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States
Duration: 6 May 200111 May 2001

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO)
CountryUSA United States
CityBaltimore, MD
Period6/05/0111/05/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Massara, A. B., Sargent, L. J., Heard, P. J., Penty, R. V., & White, I. H. (2001). 10Gb/s operation of novel single-mode, two-contact InGaAsP lasers with low drive current. 191-192. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.