Abstract
The single-mode performance of two-contact indium gallium arsenide phosphide lasers with low drive current was demonstrated. The device was fabricated using focused ion beam etching of single contact lasers. The signal bandwidth was found to increase on employing a two-dimensional lattice grating without perturbation of the device dynamics.
Original language | English |
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Pages | 191-192 |
Number of pages | 2 |
Publication status | Published - 8 Oct 2001 |
Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States Duration: 6 May 2001 → 11 May 2001 |
Conference
Conference | Conference on Lasers and Electro-Optics (CLEO) |
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Country/Territory | USA United States |
City | Baltimore, MD |
Period | 6/05/01 → 11/05/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering