Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes

R. E. Carnahan; M. A. Maldonado; K. P. Martin; A. Nogaret; R. J. Higgins; L. A. Cury; D. K. Maude; J. C. Portal; J. F. Chen; A. Y. Cho

doi:10.1063/1.108687

Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes

R. E. Carnahan, M. A. Maldonado, K. P. Martin, A. Nogaret, R. J. Higgins, L. A. Cury, D. K. Maude, J. C. Portal, J. F. Chen, A. Y. Cho

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Abstract

We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSbX‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self‐consistent calculations of the current‐voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ‐point InAs electrons tunneling through X‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.

Original language	English
Pages (from-to)	1385-1387
Journal	Applied Physics Letters
Volume	62
Issue number	12
DOIs	https://doi.org/10.1063/1.108687
Publication status	Published - 22 Mar 1993

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http://dx.doi.org/10.1063/1.108687

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title = "Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes",

abstract = "We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSbX‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self‐consistent calculations of the current‐voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ‐point InAs electrons tunneling through X‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.",

author = "Carnahan, {R. E.} and Maldonado, {M. A.} and Martin, {K. P.} and A. Nogaret and Higgins, {R. J.} and Cury, {L. A.} and Maude, {D. K.} and Portal, {J. C.} and Chen, {J. F.} and Cho, {A. Y.}",

year = "1993",

month = mar,

day = "22",

doi = "10.1063/1.108687",

language = "English",

volume = "62",

pages = "1385--1387",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes

AU - Carnahan, R. E.

AU - Maldonado, M. A.

AU - Martin, K. P.

AU - Nogaret, A.

AU - Higgins, R. J.

AU - Cury, L. A.

AU - Maude, D. K.

AU - Portal, J. C.

AU - Chen, J. F.

AU - Cho, A. Y.

PY - 1993/3/22

Y1 - 1993/3/22

N2 - We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSbX‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self‐consistent calculations of the current‐voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ‐point InAs electrons tunneling through X‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.

AB - We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSbX‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self‐consistent calculations of the current‐voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ‐point InAs electrons tunneling through X‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.

UR - http://dx.doi.org/10.1063/1.108687

U2 - 10.1063/1.108687

DO - 10.1063/1.108687

M3 - Article

SN - 0003-6951

VL - 62

SP - 1385

EP - 1387

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes

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