Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes

R. E. Carnahan, M. A. Maldonado, K. P. Martin, A. Nogaret, R. J. Higgins, L. A. Cury, D. K. Maude, J. C. Portal, J. F. Chen, A. Y. Cho

Research output: Contribution to journalArticle

Abstract

We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSbX‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self‐consistent calculations of the current‐voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ‐point InAs electrons tunneling through X‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.
Original languageEnglish
Pages (from-to)1385-1387
JournalApplied Physics Letters
Volume62
Issue number12
DOIs
Publication statusPublished - 22 Mar 1993

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resonant tunneling diodes
electron tunneling
transverse waves
magnetic fields
liquid helium
electric potential
temperature
energy

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Carnahan, R. E., Maldonado, M. A., Martin, K. P., Nogaret, A., Higgins, R. J., Cury, L. A., ... Cho, A. Y. (1993). Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes. Applied Physics Letters, 62(12), 1385-1387. https://doi.org/10.1063/1.108687

Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes. / Carnahan, R. E.; Maldonado, M. A.; Martin, K. P.; Nogaret, A.; Higgins, R. J.; Cury, L. A.; Maude, D. K.; Portal, J. C.; Chen, J. F.; Cho, A. Y.

In: Applied Physics Letters, Vol. 62, No. 12, 22.03.1993, p. 1385-1387.

Research output: Contribution to journalArticle

Carnahan, RE, Maldonado, MA, Martin, KP, Nogaret, A, Higgins, RJ, Cury, LA, Maude, DK, Portal, JC, Chen, JF & Cho, AY 1993, 'Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes', Applied Physics Letters, vol. 62, no. 12, pp. 1385-1387. https://doi.org/10.1063/1.108687
Carnahan RE, Maldonado MA, Martin KP, Nogaret A, Higgins RJ, Cury LA et al. Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes. Applied Physics Letters. 1993 Mar 22;62(12):1385-1387. https://doi.org/10.1063/1.108687
Carnahan, R. E. ; Maldonado, M. A. ; Martin, K. P. ; Nogaret, A. ; Higgins, R. J. ; Cury, L. A. ; Maude, D. K. ; Portal, J. C. ; Chen, J. F. ; Cho, A. Y. / Γ‐X intervalley tunneling in InAs/AlSb resonant tunneling diodes. In: Applied Physics Letters. 1993 ; Vol. 62, No. 12. pp. 1385-1387.
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