Material Science
Aluminum Nitride
52%
Anisotropy
9%
Cathodoluminescence
30%
Defect Density
6%
Density
10%
Dielectric Material
17%
Dry Etching
8%
Electron Backscatter Diffraction
8%
Electron Microscopy
9%
Electronic Circuit
14%
Epitaxy
9%
Gallium Arsenide
29%
Gallium Nitride
29%
Gas Mixture
9%
Halide
9%
Heterojunction
12%
Hydride
13%
III Nitride Materials
11%
Light-Emitting Diode
28%
Lithography
100%
Metamaterial
14%
Microscopy
8%
Nanorod
74%
Nanostructure
28%
Nanotube
13%
Nanowire
51%
Nitride Compound
13%
Nitride Semiconductor
12%
Novel Device
9%
Optical Property
19%
Perovskite Nanocrystal
9%
Photoluminescence
8%
Photovoltaics
14%
Plasma Etching
21%
Point Defect
9%
Quantum Well
25%
Sapphire
14%
Scanning Electron Microscopy
24%
Silicon
9%
Solar Cell
14%
Surface (Surface Science)
14%
Thermal Conductivity
9%
Thin Films
14%
Vapor Phase Epitaxy
38%
Waveguide
14%
Wet Etching
6%
Engineering
Active Region
6%
Amplitude Mask
6%
Bottom-Up Approach
15%
Bragg Cell
9%
Channelling
14%
Core-Shell
29%
Dielectrics
14%
Dislocation Density
13%
Dry Etching
11%
Extended Defect
9%
External Quantum Efficiency
9%
Fabry Perot
6%
Fits and Tolerances
14%
Flat Surface
20%
Gallium Arsenide
29%
Heterojunctions
9%
Heterostructures
6%
Imaging Contrast
14%
Light-Emitting Diode
26%
Lithography
48%
Nanomaterial
14%
Nanorod
29%
Nanotube
9%
Nanowire
29%
Optical Quality
8%
Phase Mask
6%
Photovoltaics
14%
Power Engineering
9%
Q Factor
6%
Quantum Well
29%
Ray Diffraction
9%
Residual Strain
9%
Resolution Limit
9%
Resonant Cavity
9%
Selective Area Growth
10%
Sensing Application
11%
Shell Nanowires
9%
Side Wall
6%
Solar Cell
14%
State Lighting
9%
Thermal Conductivity
9%
Threading Dislocation
9%
Ultraviolet Light
9%