COSMOS2 (COmplementary Semiconductor using thin-film Metal-Oxide System:2)

This proposal built upon a growing body of research directed towards the production of p-type tin monoxide (SnO) by atomic layer deposition (ALD) as a decisive technological advancement in the development of flexible electronics. Building upon existing funding we sought and received investment from the University of Bath to enable us to maintain a led in this technology and develop and upscale pre-established 2nd and 3rd generation precursors. Securing funding from the KEIC project fund allowed us to confidently safeguard our position in the development of p-type SnO by ALD for application in electronic and flexible electronic materials.