Wang Wang

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2014
SUBSTRATES FOR SEMICONDUCTOR DEVICES
Mollart, T. (Inventor), Jiang, Q. (Inventor), Edwards, M. J. (Inventor), Allsopp, D. (Inventor), Bowen, C. R. (Inventor) & Wang, W. N. (Inventor), 26 Jun 2014, IPC No. H01L21/20, Patent No. WO2014095373, Priority date 5 Jun 2013, Priority No. GB201310039A
Research output: Patent
2008
GaN epitaxial layer over growth method
Wang, W.-N. (Inventor), 13 Aug 2008, IPC No. H01L21/20, C30B25/18, Patent No. GB2446471 (A), Priority date 9 Feb 2007, Priority No. GB0702560A
Research output: Patent
Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
Wang, W.-N. (Inventor), 1 Jan 2008, IPC No. C30B25/18, C30B29/38, Patent No. TW200801257 (A), Priority date 23 Mar 2006, Priority No. GB0605838A
Research output: Patent
Production of single-crystal semiconductor material using a nanostructure template
Wang, W.-N. (Inventor), 1 Oct 2008, IPC No. C30B29/38, H01L21/30, Patent No. TW200839041 (A), Priority date 19 Jan 2007, Priority No. GB0701069A
Research output: Patent

Research output