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Personal profile

Research interests

I currently work in the area of semiconductor technology, predominantly in the area of group III-V optoelectronics. A major focus of my work has been the creation of optoelectronic devices based on the group III-nitride wide bandgap semiconductor materials.

I have experience in MOVPE semiconductor growth, alongside micro and nanofabrication for the creation of light-emitting and laser diodes. Recently, I have been exploring semiconductor crystal growth on three-dimensional, patterned substrates; understanding how the substrate affects the growth process. This has led to an extensive study of core-shell light-emitting diodes; primarily emitting in the visible regime, but also more recently in the ultraviolet.

As a result of needing large area nanopatterning for creating growth templates, I also have expertise in nanoimprint lithography (NIL), electron beam lithography (EBL) and displacement Talbot lithography (DTL).

Education/Academic qualification

Doctor of Philosophy, University of Oxford

Physics, Master of Physics, University of Oxford

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Projects

  • INREP - Towards Indium free TCOs

    Allsopp, D. & Shields, P.

    EU - Horizon 2020

    1/02/1531/01/18

    Project: EU Commission

  • Nanoscale Sensors for Healthcare and the Environment (NANOSENSE)

    Shields, P. & Allsopp, D.

    13/10/1413/04/15

    Project: Research-related funding

    Research Output

    AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

    Walde, S., Hagedorn, S., Coulon, P., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-kumar, G., Trager-cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R. W., Shields, P. A., Kneissl, M. & 1 others, Weyers, M., 1 Feb 2020, In : Journal of Crystal Growth. 531, 125343.

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Displacement Talbot Lithography for nano-engineering of III-nitride materials

    Coulon, P-M., Damilano, B., Alloing, B., Chausse, P., Walde, S., Enslin, J., Armstrong, R., Vézian, S., Hagedorn, S., Wernicke, T., Zúñiga-Pérez, J., Weyers, M., Kneissl, M. & Shields, P., 2 Dec 2019, In : Microsystems & Nanoengineering. 5, 52.

    Research output: Contribution to journalArticle

    Open Access
    2 Citations (Scopus)

    Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

    Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., Mehnke, F. & 16 others, Kneissl, M., Kuhn, C., Wernicke, T., Hagedorn, S., Knauer, A., Kueller, V., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Zhang, Y., Jiu, L., Gong, Y., Smith, R. M., Wang, T. & Winkelmann, A., 30 Oct 2019, In : Photonics Research. 7, 11, p. B73-B82 10 p.

    Research output: Contribution to journalArticle

    Open Access
    1 Citation (Scopus)

    Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

    Damilano, B., Coulon, P. M., Vézian, S., Brändli, V., Duboz, J. Y., Massies, J. & Shields, P. A., 27 Mar 2019, In : Applied Physics Express. 12, 4, 045007.

    Research output: Contribution to journalArticle

    Open Access
    2 Citations (Scopus)

    Understanding resolution limit of Displacement Talbot Lithography

    Chausse, P., Le Boulbar, E., Lis, S. & Shields, P., 4 Mar 2019, In : Optics Express. 27, 5, p. 5918-5930 13 p.

    Research output: Contribution to journalArticle

    Open Access
    5 Citations (Scopus)
    8 Downloads (Pure)

    Datasets

    Dataset for "Understanding the resolution limit of Displacement Talbot Lithography"

    Chausse, P. (Creator), Le Boulbar, E. (Creator), Lis, S. (Creator), Shields, P. (Creator), University of Bath, 20 Feb 2019

    Dataset

    Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'

    Shields, P. (Creator), Le Boulbar, E. (Creator), Priesol, J. (Creator), Šatka, A. (Creator), Allehiani, N. (Creator), Naresh-Kumar, G. (Creator), Fox, S. (Creator), Trager-Cowan, C. (Creator), University of Bath, Mar 2017

    Dataset

    Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

    Le Boulbar, E. (Creator), Lewins, C. (Creator), Allsopp, D. (Creator), Bowen, C. (Creator), Shields, P. (Creator), University of Bath, Apr 2016

    Dataset

    Thesis

    Development of InGaN/GaN Core-Shell Light Emitters

    Author: Girgel, I., 27 Jun 2017

    Supervisor: Shields, P. (Supervisor)

    Student thesis: Doctoral ThesisPhD

    File

    Fabrication and Characterisation of III-nitride light emitting diodes emitting at non-standard wavelengths

    Author: Cavanagh, K. F., 1 May 2019

    Supervisor: Wang, W. (Supervisor), Allsopp, D. (Supervisor) & Shields, P. (Supervisor)

    Student thesis: Doctoral ThesisPhD

    File

    Photonic Crystals for the Control of Light Extraction from III-Nitride Light-Emitting Diodes

    Author: Lewins, C., 1 Jun 2016

    Supervisor: Allsopp, D. (Supervisor) & Shields, P. (Supervisor)

    Student thesis: Doctoral ThesisPhD

    File

    Simulation, Optimisation and Manufacture of Gallium Nitride Based Blue Light Emitting Diodes on Silicon substrates

    Author: Vinden, K., 17 Jul 2019

    Supervisor: Shields, P. (Supervisor) & Allsopp, D. (Supervisor)

    Student thesis: Doctoral ThesisPhD