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Personal profile

Research interests

I currently work in the area of semiconductor technology, predominantly in the area of group III-V optoelectronics. A major focus of my work has been the creation of optoelectronic devices based on the group III-nitride wide bandgap semiconductor materials.

I have experience in MOVPE semiconductor growth, alongside micro and nanofabrication for the creation of light-emitting and laser diodes. Recently, I have been exploring semiconductor crystal growth on three-dimensional, patterned substrates; understanding how the substrate affects the growth process. This has led to an extensive study of core-shell light-emitting diodes; primarily emitting in the visible regime, but also more recently in the ultraviolet.

As a result of needing large area nanopatterning for creating growth templates, I also have expertise in nanoimprint lithography (NIL), electron beam lithography (EBL) and displacement Talbot lithography (DTL).

Education/Academic qualification

Doctor of Philosophy, University of Oxford

Award Date: 1 Jun 2001

Physics, Master of Physics, University of Oxford

Award Date: 1 Jun 1997

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  • INREP - Towards Indium free TCOs

    Allsopp, D. & Shields, P.

    EU - Horizon 2020


    Project: EU Commission

  • Nanoscale Sensors for Healthcare and the Environment (NANOSENSE)

    Shields, P. & Allsopp, D.


    Project: Research-related funding

    Research Output

    AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

    Walde, S., Hagedorn, S., Coulon, P., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-kumar, G., Trager-cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R. W., Shields, P. A., Kneissl, M. & 1 others, Weyers, M., 1 Feb 2020, In : Journal of Crystal Growth. 531, 125343.

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach

    Armstrong, R., Coulon, P. M., Bozinakis, P., Martin, R. W. & Shields, P. A., 1 Aug 2020, In : Journal of Crystal Growth. 548, 125824.

    Research output: Contribution to journalArticle

    4 Downloads (Pure)

    Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

    Zeghouane, M., André, Y., Avit, G., Jridi, J., Bougerol, C., Coulon, P., Ferret, P., Castelluci, D., Gil, E., Shields, P., Dubrovskii, V. G. & Trassoudaine, A., 29 May 2020, In : Nano Futures. 4, 2, p. 1-7 025002.

    Research output: Contribution to journalArticle

    Open Access
    19 Downloads (Pure)

    Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

    Coulon, P. M., Feng, P., Damilano, B., Vézian, S., Wang, T. & Shields, P. A., 27 Mar 2020, In : Scientific Reports. 10, 1, 5642.

    Research output: Contribution to journalArticle

    Open Access
    1 Citation (Scopus)

    Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

    Trager-Cowan, C., Alasamari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Ferenczi, G., Hourahine, B., Kotzai, A., Kraeusel, S., Kusch, G., Martin, R. W., McDermott, R., Naresh-Kumar, G., Nouf-Allehiani, M., Pascal, E., Thomson, D., Vespucci, S., Smith, M. D., Parbrook, P. J., Enslin, J. & 17 others, Mehnke, F., Kuhn, C., Wernicke, T., Kneissl, M., Hagedorn, S., Knauer, A., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Bai, J., Gong, Y., Jiu, L., Zhang, Y., Smith, R. M., Wang, T. & Winkelmann, A., 25 Mar 2020, In : Semiconductor Science and Technology. 35, 5, 054001.

    Research output: Contribution to journalArticle

    Open Access


    Dataset for "Understanding the resolution limit of Displacement Talbot Lithography"

    Chausse, P. (Creator), Le Boulbar, E. (Creator), Lis, S. (Creator) & Shields, P. (Creator), University of Bath, 20 Feb 2019


    Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'

    Shields, P. (Creator), Le Boulbar, E. (Creator), Priesol, J. (Creator), Šatka, A. (Creator), Allehiani, N. (Creator), Naresh-Kumar, G. (Creator), Fox, S. (Creator), Trager-Cowan, C. (Creator) & Allsopp, D. (Supervisor), University of Bath, Mar 2017


    Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs: Dataset

    Coulon, P. (Creator), Kusch, G. (Creator), Kusch, G. (Researcher), Le Boulbar, E. (Researcher), Chausse, P. (Other), Bryce, C. (Other), Martin, R. W. (Project Member) & Shields, P. (Project Leader), University of Bath, 2017


    Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods

    Le Boulbar, E. (Creator), Shields, P. (Researcher), Allsopp, D. (Researcher), Martin, R. W. (Researcher), Edwards, P. R. (Researcher), Cherns, D. (Researcher), Hosseini-Vajargah, S. (Creator), Edwards, P. R. (Creator), Girgel, I. (Creator), Coulon, P. (Creator), Cherns, D. (Creator), Martin, R. W. (Creator), Humphreys, C. (Creator), Bowen, C. (Creator), Allsopp, D. (Creator) & Shields, P. (Creator), University of Bath, 2015