Engineering
Magnetic Field
81%
Hole System
56%
Quantum Well
46%
Two Dimensional
37%
Silicon Dioxide
28%
Heterostructures
28%
Fermi Energy
21%
Band Gap
21%
Heated Surface
21%
Degree of Freedom
16%
Leidenfrost Effect
14%
Heterojunctions
14%
Hybridized System
14%
Electron Subbands
14%
Silicon on Insulator
14%
Leidenfrost Temperature
14%
Cooling Power
14%
Set Temperature
14%
Moving Part
14%
Absolute Value
14%
Single Device
14%
Surface Topography
14%
Cyclotron Resonance
14%
Thick Layer
14%
Excess Heat
14%
Flow Velocity
14%
Low-Temperature
14%
Heat Losses
14%
Flow Rate
14%
Directionality
14%
Microhole
14%
Surface Profile
14%
Controllability
14%
Monocrystalline Silicon
14%
Fluid Flow
14%
Linear Regime
14%
Cryogenic Temperature
14%
Simple Model
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Coulomb Interaction
8%
Linear Dependence
7%
Show Effect
7%
Positive Magnetoresistance
7%
Electron System
7%
Spin Degree
7%
Body Effect
7%
Fermi Level
7%
Activation Energy
7%
Produced Gas
7%
Electron Concentration
7%
Physics
Magnetic Field
100%
Quantum Wells
91%
Holes (Electron Deficiencies)
70%
Spin Polarization
33%
Quantum Hall Effect
31%
Cyclotron Resonance
28%
Electron Gas
23%
Magnetoresistance
21%
Quantum Dot
21%
Electron Density
18%
Heterojunctions
14%
Multiple-Quantum Coherence
14%
Critical Current
14%
Cryogenic Temperature
14%
Temperature Dependence
14%
Nuclear Magnetic Resonance
14%
Phonon
14%
Nuclear Spin
14%
Amorphous Silicon
14%
Ground State
14%
Controllability
14%
Low Temperature Operation
14%
Drag Measurement
14%
Electron Spin
11%
Resonant Tunneling
9%
Piezoelectricity
9%
Density of States
8%
Transport Property
7%
Monte Carlo Method
7%
Charge Transfer
7%
Degree of Freedom
7%
Activation Energy
6%
Material Science
Silicon
80%
Quantum Well
70%
Electrical Resistivity
42%
Surface (Surface Science)
42%
Magnetoresistance
28%
Heterojunction
28%
Spin Polarization
23%
Density
18%
Quantum Dot
18%
Carrier Concentration
18%
Semiconductor Structure
14%
Silicon Dioxide
14%
Oxide Interface
14%
Activation Energy
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Hole Concentration
14%
Physical Property
14%
Surface Topography
14%
Nanostructure
14%
Hole Mobility
14%
Doping (Additives)
14%
Transistor
14%
Boron
14%
Electron Mobility
14%
Piezoelectricity
8%