Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Dataset

Description

This dataset is the result of an investigation into the impact of the temperature and pressure on the fabrication of Gallium Nitride nanostructures. The dataset contains data acquired from etched nanorods and nanopores.The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM). The secondary electron (SE) images were produced using the manufacturer-supplied software. Figure numbers in the data file descriptions refer to the Microelectronic Engineering article by Le Boulbar et al. (2016) referenced in the related publications section.
Date made availableApr 2016
PublisherUniversity of Bath
Contact

Research Output

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Le Boulbar, E., Lewins, C., Allsopp, D., Bowen, C. & Shields, P., 5 Mar 2016, In : Microelectronic Engineering. 153, 5, p. 132-136

Research output: Contribution to journal › Article

Open Access
File
18 Citations (Scopus)
157 Downloads (Pure)

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Shields, P., Allsopp, D. & Wang, W.

Engineering and Physical Sciences Research Council

1/05/15 → 30/06/21

Project: Research council

    • NEMESIS:Novel Energy Materials: Engineering Science and Integrated Systems

    Bowen, C.

    European Research Council

    1/02/13 → 31/12/18

    Project: EU Commission

    • Lighting the Future

    Allsopp, D. & Shields, P.

    Engineering and Physical Sciences Research Council

    1/12/10 → 30/11/15

    Project: Research council

    • Cite this

    Le Boulbar, E. (Creator), Shields, P. (Researcher), Allsopp, D. (Researcher), Bowen, C. (Researcher), Lewins, C. (Data Collector), Lewins, C. (Creator), Allsopp, D. (Creator), Bowen, C. (Creator), Shields, P. (Creator) (Apr 2016). Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. University of Bath. 10.15125/BATH-00154