Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Dataset

Description

This dataset is the result of an investigation into the impact of the temperature and pressure on the fabrication of Gallium Nitride nanostructures. The dataset contains data acquired from etched nanorods and nanopores.The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM). The secondary electron (SE) images were produced using the manufacturer-supplied software. Figure numbers in the data file descriptions refer to the Microelectronic Engineering article by Le Boulbar et al. (2016) referenced in the related publications section.
Date made availableApr 2016
PublisherUniversity of Bath

Cite this

Le Boulbar, E. (Creator), Shields, P. (Researcher), Allsopp, D. (Researcher), Bowen, C. (Researcher), Lewins, C. (Data Collector), Lewins, C. (Creator), Allsopp, D. (Creator), Bowen, C. (Creator), Shields, P. (Creator) (Apr 2016). Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. University of Bath. 10.15125/BATH-00154