Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure

This dataset contains the results of scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) Energy Dispersive X-ray (EDX) and Catodoluminescence (CL) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN etched cores onto which various InGaN layer thickness were grown using fixed metal organic vapour phase epitaxy (MOVPE) growth conditions. Three different growth time were used to grow InGaN layer with various thickness: 2min, 6min, and 18min, either with or without a GaN capping layer. SEM and AFM characterization techniques were used to assess the nanorod morphology and roughness of the lateral m-plane facets. TEM were used to investigate the structural properties and assess the InGaN thickness of the m-plane facets. EDX measurements were used to assess the InGaN layer composition of the m-plane facet. CL were used to assess the optical properties of each InGaN layer thickness. Correlation of SEM, AFM, TEM, EDX and CL allow to describe the and explain the growth mechanism of a thick InGaN shell grown on GaN NRs formed by combined top-down etching and regrowth.