This dataset contains the results of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Energy Dispersive X-ray (EDX) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN plasma etched cores onto which wide InGaN layer capped with a GaN layer were grown using different metal organic vapour phase epitaxy (MOVPE) growth parameters.
Three different growth temperature were used to grow the InGaN layer: 750°C, 700°C and 650°C. SEM images were used to characterize the describe the fabrication, growth and assess nanorod morphologies. TEM were used to investigate the structural properties and assess the InGaN thickness along the entire length of the m-plane facets. EDX measurements were used to assess the homogeneity of the InGaN layer composition at different position along the m-plane facet and on the semi-polar facets.