Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays"

This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes.