This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes.
Date made available16 Mar 2020
PublisherUniversity of Bath

Cite this

Coulon, P. (Creator), Shields, P. (Project Leader) (16 Mar 2020). Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays". University of Bath. 10.15125/BATH-00726