This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes.
|Date made available||16 Mar 2020|
|Publisher||University of Bath|
Coulon, P. (Creator), Shields, P. (Project Leader) (16 Mar 2020). Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays". University of Bath. 10.15125/BATH-00726