This dataset contains scanning electron microscopy (SEM) images of various nano-patterns. The nano-patterns are first created in the resist via Displacement Talbot Lithography. The nano-patterns in the resist are then used to create dielectric or metal mask, respectively via Inductively coupled plasma dry etching or lift-off. Finally, the masks are employed either for the bottom-up selective area growth (via metal organic vapour phase epitaxy) or for the top-down fabrication of nanostructures. A combination of top-down etching and bottom-up can also be employed.
Date made available18 Sep 2019
PublisherUniversity of Bath

Cite this

Coulon, P. (Creator), Shields, P. (Project Leader) (18 Sep 2019). Dataset for "Displacement Talbot Lithography for nano-engineering of III-nitride materials". University of Bath. 10.15125/BATH-00696