This dataset contains scanning electron microscopy (SEM) images of various nano-patterns. The nano-patterns are first created in the resist via Displacement Talbot Lithography. The nano-patterns in the resist are then used to create dielectric or metal mask, respectively via Inductively coupled plasma dry etching or lift-off. Finally, the masks are employed either for the bottom-up selective area growth (via metal organic vapour phase epitaxy) or for the top-down fabrication of nanostructures. A combination of top-down etching and bottom-up can also be employed.
Date made available18 Sep 2019
PublisherUniversity of Bath

Research Output

Displacement Talbot Lithography for nano-engineering of III-nitride materials

Coulon, P-M., Damilano, B., Alloing, B., Chausse, P., Walde, S., Enslin, J., Armstrong, R., Vézian, S., Hagedorn, S., Wernicke, T., Zúñiga-Pérez, J., Weyers, M., Kneissl, M. & Shields, P., 2 Dec 2019, In : Microsystems & Nanoengineering. 5, 52.

Research output: Contribution to journalArticle

Open Access
6 Citations (Scopus)


  • Cite this

    Coulon, P. (Creator), Shields, P. (Project Leader) (18 Sep 2019). Dataset for "Displacement Talbot Lithography for nano-engineering of III-nitride materials". University of Bath. 10.15125/BATH-00696