This dataset contains the results of scanning electron microscopy (SEM) secondary electron (SE) images, panchromatic cathodoluminescence (CL) imaging and Electron Channelling Contrast Imaging (ECCI) and Raman spectroscopy on GaN epitaxial layers. These techniques were used to assess the morphology of the GaN crystal growth, and the dislocation density and strain in planar layers.
|Date made available||Mar 2017|
|Publisher||University of Bath|
|Date of data production||2010 - 2012|
Shields, P. (Creator), Le Boulbar, E. (Creator), Priesol, J. (Creator), Šatka, A. (Creator), Allehiani, N. (Creator), Naresh-Kumar, G. (Creator), Fox, S. (Creator), Trager-Cowan, C. (Creator), Allsopp, D. (Supervisor) (Mar 2017). Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'. University of Bath. 10.15125/BATH-00257